Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer

Jun Hayakawa, Shoji Ikeda, Young Min Lee, Ryutaro Sasaki, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

114 Citations (Scopus)

Abstract

We report the intrinsic critical current density (Jc0) in current-induced magnetization switching and the thermal stability factor (E/kBT, where E, kB, and T are the energy potential, the Boltzmann constant, and temperature, respectively) in MgO based magnetic tunnel junctions with a Co40Fe40B20(2 nm)/Ru(0.7-2.4 nm)/Co40Fe40B20(2 nm) synthetic ferrimagnetic (SyF) free layer. We show that Jc0 and E/kBT can be determined by analyzing the average critical current density as a function of coercivity using the Slonczewski's model taking into account thermal fluctuation. We find that high antiferromagnetic coupling between the two CoFeB layers in a SyF free layer results in reduced Jc0 without reducing high E/kBT.

Original languageEnglish
Pages (from-to)L1057-L1060
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number37-41
DOIs
Publication statusPublished - 2006 Oct

Keywords

  • CoFeB
  • Current-induced magnetization switching
  • Magnetic tunnel junction
  • MgO barrier
  • Synthetic free layer

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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