Current-induced magnetization switching and CPP-GMR in 30 nm ϕ scale spin valves fabricated using EB-assisted CVD hard masks

Shinji Isogami, Masakiyo Tsunoda, Migaku Takahashi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this study, current-perpendicular-to-plane great magnetoresistance (CPP-GMR) spin valves with the minimum pillar width of 34 nm ϕ were successfully fabricated using EB-assisted chemical-vapor-deposition (CVD) hard masks. An area of the obtained magnetic cell is about one order smaller compared with those fabricated with normal EB or photo lithography technique. Measurement of transport properties such as current-induced magnetization switching (CIMS) and MR were demonstrated in such spin valves with various pillar widths. Dependence of the CPP-MR properties on the milled pillar width was discussed. In the case of 66 nm ϕ width in particular, the MR by external magnetic field switching and CIMS were 0.4% and 0.3%, respectively. The critical switching current Icwas ~40 mA (Jc ~ 9 x 108 A/cm2). In the case of smaller width, only MR by external magnetic field was observed.

Original languageEnglish
Pages (from-to)2676-2678
Number of pages3
JournalIEEE Transactions on Magnetics
Volume42
Issue number10
DOIs
Publication statusPublished - 2006 Oct

Keywords

  • CPP-GMR spin valve
  • Chemical-vapor-deposition (CVD)
  • critical current density
  • current-induced magnetization switching (CIMS)
  • electron beam (EB)
  • magnetoresistance (MR)
  • scanning electron microscope (SEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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