Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As

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Abstract

The authors investigate the current density and temperature dependence of current induced effective magnetic field Heff through spin-orbit interaction in a ferromagnetic semiconductor Ga0.92 Mn0.08 As having uniaxial magnetic anisotropy. The change of the magnitude of apparent magnetic anisotropy induced by Heff that is dependent on the current direction and density is observed by transport measurements using the planar Hall effect. The authors show the 180° magnetization switching through Heff by applying pulsed current.

Original languageEnglish
Article number222501
JournalApplied Physics Letters
Volume97
Issue number22
DOIs
Publication statusPublished - 2010 Nov 29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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