Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions

Jun Hayakawa, Shoji Ikeda, Young Min Lee, Ryutaro Sasaki, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideo Ohno

Research output: Contribution to journalArticle

164 Citations (Scopus)

Abstract

Current-driven magnetization switching in low-resistance Co 40Fe40B20/MgO/Co40Fe 40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270 and 300°C are found to be as low as 7.8 × 105 and 8.8 × 105 A/cm2 with accompanying tunnel magnetoresistance (TMR) ratios of 49 and 73%, respectively. Further annealing of the samples at 350°C increases TMR ratio to 160%, while accompanying Jc increases to 2.5 × 106 A/cm2. We attribute the low Jc to the high spin-polarization of tunnel current and small MsV product of the CoFeB single free layer, where Ms is the saturation magnetization and V the volume of the free layer.

Original languageEnglish
Pages (from-to)L1267-L1270
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number37-41
DOIs
Publication statusPublished - 2005 Sep 30

Keywords

  • CoFeB
  • Current-driven magnetization switching
  • Magnetic tunnel junction
  • MgO barrier

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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