TY - JOUR
T1 - Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga, Mn)As/GaAs/(Ga, Mn)As tunnel junction
AU - Chiba, D.
AU - Sato, Y.
AU - Kita, T.
AU - Matsukura, F.
AU - Ohno, H.
N1 - Funding Information:
We thank M. Yamanouchi, H. Matsutera, M. Shirai, Y. Ohno, K. Ohtani, T. Dietl, M. Sawicki, J. Wróbel, and A. H. MacDonald for useful discussions. This work was partly supported by the IT-Program of Research Revolution 2002 (RR2002) from MEXT, a Grant-in-Aid from MEXT, and the 21st Century COE Program at Tohoku University.
PY - 2004/11/19
Y1 - 2004/11/19
N2 - The current-driven magnetization reversal was demonstrated in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction at 30K. It was observed that magnetization switching occurred at low critical current densities of 1.1-2.2 ×105 A/cm2. It was found that the magnetization reversal was due to the spin-transfer torque exerted from the spin-polarized current. It was also found that current-induced reversal was advantageous for ultrahigh density magnetic memories over magnetization reversal using magnetic fields.
AB - The current-driven magnetization reversal was demonstrated in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction at 30K. It was observed that magnetization switching occurred at low critical current densities of 1.1-2.2 ×105 A/cm2. It was found that the magnetization reversal was due to the spin-transfer torque exerted from the spin-polarized current. It was also found that current-induced reversal was advantageous for ultrahigh density magnetic memories over magnetization reversal using magnetic fields.
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U2 - 10.1103/PhysRevLett.93.216602
DO - 10.1103/PhysRevLett.93.216602
M3 - Article
AN - SCOPUS:37649027698
VL - 93
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 21
M1 - 216602
ER -