TY - JOUR
T1 - Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga, Mn)As/GaAs/(Ga, Mn)As tunnel junction
AU - Chiba, D.
AU - Sato, Y.
AU - Kita, T.
AU - Matsukura, F.
AU - Ohno, H.
PY - 2004/11/19
Y1 - 2004/11/19
N2 - The current-driven magnetization reversal was demonstrated in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction at 30K. It was observed that magnetization switching occurred at low critical current densities of 1.1-2.2 ×105 A/cm2. It was found that the magnetization reversal was due to the spin-transfer torque exerted from the spin-polarized current. It was also found that current-induced reversal was advantageous for ultrahigh density magnetic memories over magnetization reversal using magnetic fields.
AB - The current-driven magnetization reversal was demonstrated in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction at 30K. It was observed that magnetization switching occurred at low critical current densities of 1.1-2.2 ×105 A/cm2. It was found that the magnetization reversal was due to the spin-transfer torque exerted from the spin-polarized current. It was also found that current-induced reversal was advantageous for ultrahigh density magnetic memories over magnetization reversal using magnetic fields.
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U2 - 10.1103/PhysRevLett.93.216602
DO - 10.1103/PhysRevLett.93.216602
M3 - Article
AN - SCOPUS:37649027698
VL - 93
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 21
M1 - 216602
ER -