Abstract
We report on the detection of terahertz radiation by an on-chip planar asymmetric plasmonic structure in the frequency region above one terahertz. The detector is based on a field-effect transistor that has a dual grating gate structure with an asymmetric unit cell, which provides a geometrical asymmetry within the structure. Biasing the detector with a dc source-to-drain current in the linear region of the current-voltage characteristic introduces an additional asymmetry (electrical asymmetry) that enhances the detector responsivity by more than one order of magnitude (by a factor of 20) as compared with the unbiased case due to the cooperative effect of the geometrical and electrical asymmetries. In addition to the responsivity enhancement, we report a relatively low noise equivalent power and a peculiar non-monotonic dependence of the responsivity on the frequency, which results from the multi-plasmonic-cavity structure of the device.
Original language | English |
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Article number | 262104 |
Journal | Applied Physics Letters |
Volume | 104 |
Issue number | 26 |
DOIs | |
Publication status | Published - 2014 Jun 30 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)