Current-confinement structure and extremely high current density in organic light-emitting transistors

Kosuke Sawabe, Masaki Imakawa, Masaki Nakano, Takeshi Yamao, Shu Hotta, Yoshihiro Iwasa, Taishi Takenobu

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm-2, which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.

Original languageEnglish
Pages (from-to)6141-6146
Number of pages6
JournalAdvanced Materials
Volume24
Issue number46
DOIs
Publication statusPublished - 2012 Dec 4

Keywords

  • ambipolar transistors
  • light-emitting transistors
  • organic transistors
  • single-crystal transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Sawabe, K., Imakawa, M., Nakano, M., Yamao, T., Hotta, S., Iwasa, Y., & Takenobu, T. (2012). Current-confinement structure and extremely high current density in organic light-emitting transistors. Advanced Materials, 24(46), 6141-6146. https://doi.org/10.1002/adma.201202252