Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN

Kengo Kobayashi, Shinya Hatakeyama, Tomohiro Yoshida, Daniel Piedra, Tomás Palacios, Taiichi Otsuji, Tetsuya Suemitsu

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report a new fabrication process to realize a slant field plate - a field plate in which the plate-to-channel distance gradually increases with the distance from the gate edge - using a multi-layer SiCN film. AlGaN/GaN HEMTs with several types of field plates are fabricated by this technique. The current collapse in the pulsed measurements is suppressed by the slant field plates more effectively than the conventional parallel-plate field plates as a result of the reduced electric field at the gate edge.

Original languageEnglish
Pages (from-to)63-69
Number of pages7
JournalSolid-State Electronics
Volume101
DOIs
Publication statusPublished - 2014 Nov

Keywords

  • Current collapse
  • Field effect transistors
  • Field plate
  • Gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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