Current and future 3D-LSI technology for image sensor devices

Makoto Motoyoshi, Hirofumi Nakamura, Manabu Bonkohara, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)


Recently the development of three-dimensional large-scale integration (3D-LSI) has been accelerated and its stage has changed from the research level or limited production level to the investigation level with a perspective on mass production. This paper describes the current and future 3D-LSI technologies including Through Silicon Vias (TSVs) focused on image sensor application. Using the current technologies, the chip size packages (CSPs) for 1.3M, 2M, and 5M pixel CMOS image sensors are successfully fabricated without performance degradation. One of many potential applications for 3D-LSI is the high performance focal plane array image sensors. We propose the high-speed image sensor with 100% optical fill factor by using next generation 3D-LSI technology with micro-bumps and micro-TSVs.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Materials and Technologies for 3-D Integration
Number of pages8
Publication statusPublished - 2009
EventMaterials and Technologies for 3-D Integration - 2008 MRS Fall Meeting - Boston, MA, United States
Duration: 2008 Dec 12008 Dec 3

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherMaterials and Technologies for 3-D Integration - 2008 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Current and future 3D-LSI technology for image sensor devices'. Together they form a unique fingerprint.

Cite this