Curie temperature versus hole concentration in field-effect structures of Ga1-x Mnx As

Y. Nishitani, D. Chiba, M. Endo, M. Sawicki, F. Matsukura, T. Dietl, H. Ohno

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

The Curie temperature TC is investigated as a function of the hole concentration p in thin films of ferromagnetic semiconductor (Ga,Mn)As. The magnetic properties are probed by transport measurements and p is varied by the application of an external electric field in a field-effect transistor configuration. It is found that TC ∼ pγ, where the exponent γ=0.19±0.02 over a wide range of Mn compositions and channel thicknesses. The magnitude of γ is reproduced by a p-d Zener model taking into account nonuniform hole distribution along the growth direction, determined by interface states and the applied gate electric fields.

Original languageEnglish
Article number045208
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number4
DOIs
Publication statusPublished - 2010 Jan 27

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Curie temperature versus hole concentration in field-effect structures of Ga1-x Mnx As'. Together they form a unique fingerprint.

  • Cite this