Cu(In,Ga)Se2 solar cell with 16.7% active-area efficiency achieved by sputtering from a quaternary target

Liangqi Ouyang, Daming Zhuang, Ming Zhao, Ning Zhang, Xiaolong Li, Li Guo, Rujun Sun, Mingjie Cao

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

In this work, we report the fabrication method of sputtering from a CIGS quaternary target to obtain high-efficiency CIGS thin-film solar-cell devices. The as-deposited CIGS absorbers are prepared by sputtering from a CIGS target and a subsequent annealing treatment under the Ar+H2Se (5% H2Se) atmosphere is applied on the absorbers. A high conversion efficiency of 16.7% is achieved with an average conversion efficiency of 15.9% over 10cm×10cm on soda-lime glass. This result shows sputtering directly from a quaternary CIGS target is a very promising fabrication method to obtain high-performance solar-cell devices and is suitable for the further fabrication of large-area devices and modules. J-V characteristic curve of the CIGS solar cell with the best efficiency achieved by sputtering from a quaternary target.

Original languageEnglish
JournalPhysica Status Solidi (A) Applications and Materials Science
DOIs
Publication statusAccepted/In press - 2015

Keywords

  • Annealing
  • CuInGaSe
  • Ordered vacancy compounds
  • Solar cells
  • Sputtering

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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