Cubic III-nitrides: Potential photonic materials

K. Onabe, S. Sanorpim, H. Kato, M. Kakuda, T. Nakamura, K. Nakamura, Shigeyuki Kuboya, R. Katayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The growth and characterization of some cubic III-nitride films on suitable cubic substrates have been done, namely, c- GaN on GaAs by MOVPE, c-GaN and c-AlGaN on MgO by RF-MBE, and c-InN and c-InGaN (In-rich) on YSZ by RFMBE. This series of study has been much focused on the cubic-phase purity as dependent on the respective growth conditions and resulting electrical and optical properties. For c-GaN and c-InN films, a cubic-phase purity higher than 95% is attained in spite of the metastable nature of the cubic III-nitrides. However, for c-AlGaN and c-InGaN films, the cubic-phase purity is rapidly degraded with significant incorporation of the hexagonal phase through stacking faults on cubic {111} faces which may be exposed on the roughened growing or substrate surface. It has been shown that the electron mobilities in c-GaN and c-AlGaN films are much related to phase purity.

Original languageEnglish
Title of host publicationQuantum Sensing and Nanophotonic Devices VIII
DOIs
Publication statusPublished - 2011 May 13
EventQuantum Sensing and Nanophotonic Devices VIII - San Francisco, CA, United States
Duration: 2011 Jan 232011 Jan 27

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7945
ISSN (Print)0277-786X

Other

OtherQuantum Sensing and Nanophotonic Devices VIII
CountryUnited States
CitySan Francisco, CA
Period11/1/2311/1/27

Keywords

  • AlN
  • GaN
  • InN
  • MOVPE
  • RF-MBE
  • cubic III-nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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