Cubic GaN films on GaAs (001) substrates without deep-level luminescence grown by metalorganic vapor phase epitaxy

K. Onabe, J. Wu, R. Katayama, F. H. Zhao, A. Nagayama, Y. Shiraki

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

Cubic GaN films on GaAs (001) substrates which show a low-temperature photoluminescence (PL) without the deep-level orange (2.0 to 2.1 eV) band were grown by metalorganic vapor phase epitaxy (MOVPE). The orange luminescence recovers its relative intensity at room temperature, though the dominance of band-edge free exciton is still significant. The surface morphology was much smoother and the inclusion of hexagonal phase was much reduced for the samples with the suppressed orange band. It is suggested that the role of the GaN buffer layer is very essential in the optimized growth for high optical quality films, providing a flat cubic structure template as well as avoiding thermal damage of GaAs surface at high temperatures.

Original languageEnglish
Pages (from-to)15-19
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume180
Issue number1
DOIs
Publication statusPublished - 2000 Jul
Externally publishedYes
Event3rd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen/Berlin, Ger
Duration: 2000 Mar 62000 Mar 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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