Abstract
Cubic GaN films on GaAs (001) substrates which show a low-temperature photoluminescence (PL) without the deep-level orange (2.0 to 2.1 eV) band were grown by metalorganic vapor phase epitaxy (MOVPE). The orange luminescence recovers its relative intensity at room temperature, though the dominance of band-edge free exciton is still significant. The surface morphology was much smoother and the inclusion of hexagonal phase was much reduced for the samples with the suppressed orange band. It is suggested that the role of the GaN buffer layer is very essential in the optimized growth for high optical quality films, providing a flat cubic structure template as well as avoiding thermal damage of GaAs surface at high temperatures.
| Original language | English |
|---|---|
| Pages (from-to) | 15-19 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 180 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2000 Jul |
| Externally published | Yes |
| Event | 3rd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen/Berlin, Ger Duration: 2000 Mar 6 → 2000 Mar 10 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Fingerprint Dive into the research topics of 'Cubic GaN films on GaAs (001) substrates without deep-level luminescence grown by metalorganic vapor phase epitaxy'. Together they form a unique fingerprint.
Cite this
Onabe, K., Wu, J., Katayama, R., Zhao, F. H., Nagayama, A., & Shiraki, Y. (2000). Cubic GaN films on GaAs (001) substrates without deep-level luminescence grown by metalorganic vapor phase epitaxy. Physica Status Solidi (A) Applied Research, 180(1), 15-19. https://doi.org/10.1002/1521-396X(200007)180:1<15::AID-PSSA15>3.0.CO;2-B