CuAlSe2 chalcopyrite epitaxial layers grown by low-pressure metalorganic chemical vapor deposition

S. Chichibu, S. Shirakata, A. Iwai, S. Matsumoto, H. Higuchi, S. Isomura

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

Epitaxial layers of CuAlSe2 chalcopyrite crystals were successfully grown on GaAs and GaP substrates by low-pressure metalorganic chemical vapor deposition. The epilayers were comprehensively characterized by X-ray diffraction, transmission electron microscope, transmission electron diffraction, electron-probe microanalysis, secondary-ion mass spectrometry, photoreflectance (PR), photoluminescence (PL), and Hall measurements. Dependence of growth rate and film properties on growth parameters, such as growth temperature and input molar flow ratio of the metalorganic precursors were studied. It was found that the good-quality epilayers were grown in the narrow range of the growth conditions. The valence to conduction band transition energies of such good-quality epilayers determined by the PR spectra are close to those for the bulk crystals. Stoichiometric CuAlSe2 epilayers exhibited a yellow-green PL peak at 2.27 eV, which is the shortest-wavelength PL ever reported for CuAlSe2 single crystals.

Original languageEnglish
Pages (from-to)551-559
Number of pages9
JournalJournal of Crystal Growth
Volume131
Issue number3-4
DOIs
Publication statusPublished - 1993 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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