Cu single damascene integration of an organic nonporous ultralow- κ fluorocarbon dielectric deposited by microwave-excited plasma-enhanced CVD

Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Rihito Kuroda, Shin Ichiro Kuroki, Kazumasa Kawase, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

An integration of an organic nonporous ultralow-κ dielectric fluorocarbon (k =2.2) deposited by microwave-excited plasma-enhanced CVD into Cu single damascene interconnects is developed in this paper. The changing of the chemical structure of the fluorocarbon was found after dry etching, which resulted in the degradation of electrical properties during the postetching cleaning process. A nitrogen plasma treatment was applied as a postetching process to minimize damage introduction to the fluorocarbon in the following damascene fabrication processes, and a line-to-line leakage current was significantly improved without the variance of effective dielectric constant (k \rm eff} =2.5) in Cu lines. In a thermal stress test at 350 ${\circC after Cu-interconnect fabrication, no degradation of the Cu line resistance and line-to-line capacitance was found, which indicated a sufficient thermal stability of the fluorocarbon film in Cu single damascene interconnects. Therefore, this robust organic nonporous fluorocarbon film is considered as one of the promising candidates of ultralow- κ dielectrics for high-performance Cu interconnects in the future.

Original languageEnglish
Article number6164255
Pages (from-to)1445-1453
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume59
Issue number5
DOIs
Publication statusPublished - 2012 May

Keywords

  • Cu damascene
  • low-κ
  • microwave excited PE-CVD (MWPE-CVD)
  • nonporous
  • postetching plasma treatment

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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