TY - GEN
T1 - Cu lateral interconnects formed between 100-mm-thick self-assembled chips on flexible substrates
AU - Murugesan, M.
AU - Bea, J. C.
AU - Fukushima, T.
AU - Konno, T.
AU - Kiyoyama, K.
AU - Jeong, W. C.
AU - Kino, H.
AU - Noriki, A.
AU - Lee, K. W.
AU - Tanaka, T.
AU - Koyanagi, M.
PY - 2009/10/12
Y1 - 2009/10/12
N2 - A very new interconnection method, namely Cu lateralinterconnection is proposed and tested for the heterogeneous multi-chip module integration in which MEMS and LSI chips are self assembled onto the flexible substrate. Here, the lateral interconnects runs between a few hundred microns thick chip and the Si or flexible substrates as well as at inter chip level. These Cu lateral interconnects were fabricated via conventional electroplating technique. As formed single as well as daisy chain lateral interconnects (both are crossingover the thick test chips that are face-up bonded onto the flexible substrates by self-assembly) were characterized for their electrical characteristics. We have obtained a low resistance values for the Cu lateral interconnects which are close to the calculated values. Further, a module contains RF test chips that are interconnected by this unique Cu lateralinterconnections has been tested for the operation.
AB - A very new interconnection method, namely Cu lateralinterconnection is proposed and tested for the heterogeneous multi-chip module integration in which MEMS and LSI chips are self assembled onto the flexible substrate. Here, the lateral interconnects runs between a few hundred microns thick chip and the Si or flexible substrates as well as at inter chip level. These Cu lateral interconnects were fabricated via conventional electroplating technique. As formed single as well as daisy chain lateral interconnects (both are crossingover the thick test chips that are face-up bonded onto the flexible substrates by self-assembly) were characterized for their electrical characteristics. We have obtained a low resistance values for the Cu lateral interconnects which are close to the calculated values. Further, a module contains RF test chips that are interconnected by this unique Cu lateralinterconnections has been tested for the operation.
UR - http://www.scopus.com/inward/record.url?scp=70349677328&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70349677328&partnerID=8YFLogxK
U2 - 10.1109/ECTC.2009.5074210
DO - 10.1109/ECTC.2009.5074210
M3 - Conference contribution
AN - SCOPUS:70349677328
SN - 9781424444762
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1496
EP - 1501
BT - 2009 Proceedings 59th Electronic Components and Technology Conference, ECTC 2009
T2 - 2009 59th Electronic Components and Technology Conference, ECTC 2009
Y2 - 26 May 2009 through 29 May 2009
ER -