Cu lateral interconnects formed between 100-mm-thick self-assembled chips on flexible substrates

M. Murugesan, J. C. Bea, T. Fukushima, T. Konno, K. Kiyoyama, W. C. Jeong, H. Kino, A. Noriki, K. W. Lee, T. Tanaka, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

A very new interconnection method, namely Cu lateralinterconnection is proposed and tested for the heterogeneous multi-chip module integration in which MEMS and LSI chips are self assembled onto the flexible substrate. Here, the lateral interconnects runs between a few hundred microns thick chip and the Si or flexible substrates as well as at inter chip level. These Cu lateral interconnects were fabricated via conventional electroplating technique. As formed single as well as daisy chain lateral interconnects (both are crossingover the thick test chips that are face-up bonded onto the flexible substrates by self-assembly) were characterized for their electrical characteristics. We have obtained a low resistance values for the Cu lateral interconnects which are close to the calculated values. Further, a module contains RF test chips that are interconnected by this unique Cu lateralinterconnections has been tested for the operation.

Original languageEnglish
Title of host publication2009 Proceedings 59th Electronic Components and Technology Conference, ECTC 2009
Pages1496-1501
Number of pages6
DOIs
Publication statusPublished - 2009 Oct 12
Event2009 59th Electronic Components and Technology Conference, ECTC 2009 - San Diego, CA, United States
Duration: 2009 May 262009 May 29

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Other

Other2009 59th Electronic Components and Technology Conference, ECTC 2009
CountryUnited States
CitySan Diego, CA
Period09/5/2609/5/29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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