Cu damascene interconnects with an organic low-k fluorocarbon dielectric deposited by microwave excited plasma enhanced CVD

X. Gu, T. Nemoto, Y. Tomita, A. Shirotori, R. Duyos-Mateo, K. Miyatani, A. Saito, Y. Kobayashi, Akinobu Teramoto, S. Kuroki, T. Nozawa, T. Matsuoka, Shigetoshi Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

An organic non-porous low-k dielectric, fluorocarbon (k=2.2), deposited by a new microwave excited plasma enhanced CVD was successfully integrated into Cu damascene interconnects. A practical nitrogen plasma treatment was also developed as a post dry etch process to minimize damage introduction to fluorocarbon in following damascene process. Electrical characteristics of leakage current significantly improved with low effective dielectric constant (keff=2.5). Thermal stress test results of both blanket film and Cu damascene lines reveal that the new fluorocarbon film indicates sufficient thermal stability.

Original languageEnglish
Title of host publication2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
DOIs
Publication statusPublished - 2011 Aug 30
Event2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011 - Dresden, Germany
Duration: 2011 May 82011 May 12

Publication series

Name2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Other

Other2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
Country/TerritoryGermany
CityDresden
Period11/5/811/5/12

ASJC Scopus subject areas

  • Materials Chemistry
  • Metals and Alloys

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