Cu-Cu Bonding Challenges with 'i-ACF' for Advanced 3D Integration

Shunji Kurooka, Yoshinori Hotta, Ai Nakamura, Mitsumasa Koyanagi, Takahumi Fukushima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we demonstrated Cu-Cu bonding with an inorganic anisotropic conductive film called 'i-ACF' composed of an anodized aluminum oxide (AAO) film with a huge number of 60-nm-diameter Cu nano-pillars (CNPs). Lower-Temperature/pressure Cu-Cu bonding conditions below 250°C/50 MPa were achieved. When we employed a daisy chain consisting of 5, 096 Cu electrodes with a size of 28 μm, the resulting resistances of each joint were found to be 0.1 Ω. The key process was Cu-Cu bonding through the 'i-ACF' under a reducing atmosphere, which inhibited the oxidation of the CNPs. Consequently, the bonding temperature was able to be lowered down to 200°C.

Original languageEnglish
Title of host publicationIEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728148700
DOIs
Publication statusPublished - 2019 Oct
Event2019 IEEE International 3D Systems Integration Conference, 3DIC 2019 - Sendai, Japan
Duration: 2019 Oct 82019 Oct 10

Publication series

NameIEEE 2019 International 3D Systems Integration Conference, 3DIC 2019

Conference

Conference2019 IEEE International 3D Systems Integration Conference, 3DIC 2019
CountryJapan
CitySendai
Period19/10/819/10/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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