Cu alloy metallization for self-forming barrier process

J. Koike, M. Haneda, J. Iijima, M. Wada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

36 Citations (Scopus)

Abstract

A novel Cu-Mn alloy has been developed to self-form a diffusion barrier layer at metal/dielectric interface without depositing a conventional metal barrier layer. The integration results are reviewed first to show its excellent reliability and electrical characteristics. Selection criteria of the alloying element are delineated. The reason why Mn is better than other elements is explained in terms of thermodynamic activity. The impacts of the self-forming barrier process on the BEOL process are discussed.

Original languageEnglish
Title of host publication2006 International Interconnect Technology Conference, IITC
Pages161-163
Number of pages3
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 International Interconnect Technology Conference, IITC - Burlingame, CA, United States
Duration: 2006 Jun 52006 Jun 7

Publication series

Name2006 International Interconnect Technology Conference, IITC

Other

Other2006 International Interconnect Technology Conference, IITC
CountryUnited States
CityBurlingame, CA
Period06/6/506/6/7

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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    Koike, J., Haneda, M., Iijima, J., & Wada, M. (2006). Cu alloy metallization for self-forming barrier process. In 2006 International Interconnect Technology Conference, IITC (pp. 161-163). [1648676] (2006 International Interconnect Technology Conference, IITC). https://doi.org/10.1109/IITC.2006.1648676