Crystallography and structural evolution of cubic boron nitride films during bias sputter deposition

D. V. Shtansky, O. Tsuda, Y. Ikuhara, T. Yoshida

    Research output: Contribution to journalArticle

    27 Citations (Scopus)

    Abstract

    The mechanism and the crystallography of the growth of cubic boron nitride (c-BN) films deposited on 〈100〉-oriented silicon substrates by radio-frequency bias sputtering were studied by cross-sectional high-resolution transmission electron microscopy. Particular attention was paid to the atomic structure of graphitic BN and grain boundaries in the c-BN films.

    Original languageEnglish
    Pages (from-to)3745-3759
    Number of pages15
    JournalActa Materialia
    Volume48
    Issue number14
    DOIs
    Publication statusPublished - 2000 Sep 4

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Ceramics and Composites
    • Polymers and Plastics
    • Metals and Alloys

    Fingerprint Dive into the research topics of 'Crystallography and structural evolution of cubic boron nitride films during bias sputter deposition'. Together they form a unique fingerprint.

  • Cite this