Abstract
The mechanism and the crystallography of the growth of cubic boron nitride (c-BN) films deposited on 〈100〉-oriented silicon substrates by radio-frequency bias sputtering were studied by cross-sectional high-resolution transmission electron microscopy. Particular attention was paid to the atomic structure of graphitic BN and grain boundaries in the c-BN films.
| Original language | English |
|---|---|
| Pages (from-to) | 3745-3759 |
| Number of pages | 15 |
| Journal | Acta Materialia |
| Volume | 48 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2000 Sep 4 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Polymers and Plastics
- Metals and Alloys
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Shtansky, D. V., Tsuda, O., Ikuhara, Y., & Yoshida, T. (2000). Crystallography and structural evolution of cubic boron nitride films during bias sputter deposition. Acta Materialia, 48(14), 3745-3759. https://doi.org/10.1016/S1359-6454(00)00159-2