The mechanism and the crystallography of the growth of cubic boron nitride (c-BN) films deposited on 〈100〉-oriented silicon substrates by radio-frequency bias sputtering were studied by cross-sectional high-resolution transmission electron microscopy. Particular attention was paid to the atomic structure of graphitic BN and grain boundaries in the c-BN films.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Polymers and Plastics
- Metals and Alloys