Crystallography and structural evolution of cubic boron nitride films during bias sputter deposition

D. V. Shtansky; O. Tsuda; Y. Ikuhara; T. Yoshida

doi:10.1016/S1359-6454(00)00159-2

Crystallography and structural evolution of cubic boron nitride films during bias sputter deposition

D. V. Shtansky, O. Tsuda, Y. Ikuhara, T. Yoshida

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

The mechanism and the crystallography of the growth of cubic boron nitride (c-BN) films deposited on 〈100〉-oriented silicon substrates by radio-frequency bias sputtering were studied by cross-sectional high-resolution transmission electron microscopy. Particular attention was paid to the atomic structure of graphitic BN and grain boundaries in the c-BN films.

Original language	English
Pages (from-to)	3745-3759
Number of pages	15
Journal	Acta Materialia
Volume	48
Issue number	14
DOIs	https://doi.org/10.1016/S1359-6454(00)00159-2
Publication status	Published - 2000 Sep 4

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Polymers and Plastics
Metals and Alloys

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10.1016/S1359-6454(00)00159-2

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title = "Crystallography and structural evolution of cubic boron nitride films during bias sputter deposition",

abstract = "The mechanism and the crystallography of the growth of cubic boron nitride (c-BN) films deposited on 〈100〉-oriented silicon substrates by radio-frequency bias sputtering were studied by cross-sectional high-resolution transmission electron microscopy. Particular attention was paid to the atomic structure of graphitic BN and grain boundaries in the c-BN films.",

author = "Shtansky, {D. V.} and O. Tsuda and Y. Ikuhara and T. Yoshida",

note = "Funding Information: D.S. acknowledges the support of the Japan Society for the Promotion of Science (JSPS) during this work. This work was supported financially by JSPS under the program “Research for the Future” (JSPS-RFTF Grant No. 97R15301).",

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AU - Shtansky, D. V.

AU - Tsuda, O.

AU - Ikuhara, Y.

AU - Yoshida, T.

N1 - Funding Information: D.S. acknowledges the support of the Japan Society for the Promotion of Science (JSPS) during this work. This work was supported financially by JSPS under the program “Research for the Future” (JSPS-RFTF Grant No. 97R15301).

PY - 2000/9/4

Y1 - 2000/9/4

N2 - The mechanism and the crystallography of the growth of cubic boron nitride (c-BN) films deposited on 〈100〉-oriented silicon substrates by radio-frequency bias sputtering were studied by cross-sectional high-resolution transmission electron microscopy. Particular attention was paid to the atomic structure of graphitic BN and grain boundaries in the c-BN films.

AB - The mechanism and the crystallography of the growth of cubic boron nitride (c-BN) films deposited on 〈100〉-oriented silicon substrates by radio-frequency bias sputtering were studied by cross-sectional high-resolution transmission electron microscopy. Particular attention was paid to the atomic structure of graphitic BN and grain boundaries in the c-BN films.

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JF - Acta Materialia

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Crystallography and structural evolution of cubic boron nitride films during bias sputter deposition

Abstract

ASJC Scopus subject areas

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