Abstract
The mechanism and the crystallography of the growth of cubic boron nitride (c-BN) films deposited on 〈100〉-oriented silicon substrates by radio-frequency bias sputtering were studied by cross-sectional high-resolution transmission electron microscopy. Particular attention was paid to the atomic structure of graphitic BN and grain boundaries in the c-BN films.
Original language | English |
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Pages (from-to) | 3745-3759 |
Number of pages | 15 |
Journal | Acta Materialia |
Volume | 48 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2000 Sep 4 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Polymers and Plastics
- Metals and Alloys