Crystallographic orientation dependent electrical characteristics of La2O3 MOS capacitors

H. Nakayama, K. Kakushima, P. Ahmet, E. Ikenaga, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Effect of substrate surface orientation on the properties of La 2O3 MOS capacitors was investigated. The dielectric-thickness dependence on FFB indicated that the (110) sample contains smaller amount of fixed charge than the other samples of (100) and (111). The EOT after post-metallization annealing also varied with the orientation: larger value for (111) than the other. The x-ray photoemission spectroscopy revealed that the growth of SiO2-rich silicate phase of low permittivity depends on the orientation and can change EOT. The results suggest that the (110) is preferable for small EOT and adequate FFB value when the interface-state density is significantly reduced.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Pages339-345
Number of pages7
Edition6
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 52009 Oct 7

Publication series

NameECS Transactions
Number6
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period09/10/509/10/7

ASJC Scopus subject areas

  • Engineering(all)

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    Nakayama, H., Kakushima, K., Ahmet, P., Ikenaga, E., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2009). Crystallographic orientation dependent electrical characteristics of La2O3 MOS capacitors. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 339-345). (ECS Transactions; Vol. 25, No. 6). https://doi.org/10.1149/1.3206632