Crystallographic orientation dependent electrical characteristics of La2O3 MOS capacitors

H. Nakayama; K. Kakushima; P. Ahmet; E. Ikenaga; K. Tsutsui; N. Sugii; T. Hattori; H. Iwai

doi:10.1149/1.3206632

Crystallographic orientation dependent electrical characteristics of La₂O₃ MOS capacitors

H. Nakayama, K. Kakushima, P. Ahmet, E. Ikenaga, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Effect of substrate surface orientation on the properties of La ₂O₃ MOS capacitors was investigated. The dielectric-thickness dependence on F_FB indicated that the (110) sample contains smaller amount of fixed charge than the other samples of (100) and (111). The EOT after post-metallization annealing also varied with the orientation: larger value for (111) than the other. The x-ray photoemission spectroscopy revealed that the growth of SiO₂-rich silicate phase of low permittivity depends on the orientation and can change EOT. The results suggest that the (110) is preferable for small EOT and adequate F_FB value when the interface-state density is significantly reduced.

Original language	English
Title of host publication	ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Pages	339-345
Number of pages	7
Edition	6
DOIs	https://doi.org/10.1149/1.3206632
Publication status	Published - 2009
Externally published	Yes
Event	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria Duration: 2009 Oct 5 → 2009 Oct 7

Publication series

Name	ECS Transactions
Number	6
Volume	25
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
Country	Austria
City	Vienna
Period	09/10/5 → 09/10/7

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3206632

Fingerprint Dive into the research topics of 'Crystallographic orientation dependent electrical characteristics of La<sub>2</sub>O<sub>3</sub> MOS capacitors'. Together they form a unique fingerprint.

Cite this

Nakayama, H., Kakushima, K., Ahmet, P., Ikenaga, E., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2009). Crystallographic orientation dependent electrical characteristics of La₂O₃ MOS capacitors. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 339-345). (ECS Transactions; Vol. 25, No. 6). https://doi.org/10.1149/1.3206632

Crystallographic orientation dependent electrical characteristics of La₂O₃ MOS capacitors. / Nakayama, H.; Kakushima, K.; Ahmet, P.; Ikenaga, E.; Tsutsui, K.; Sugii, N.; Hattori, T.; Iwai, H.

ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6. ed. 2009. p. 339-345 (ECS Transactions; Vol. 25, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakayama, H, Kakushima, K, Ahmet, P, Ikenaga, E, Tsutsui, K, Sugii, N, Hattori, T & Iwai, H 2009, Crystallographic orientation dependent electrical characteristics of La₂O₃ MOS capacitors. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6 edn, ECS Transactions, no. 6, vol. 25, pp. 339-345, 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society, Vienna, Austria, 09/10/5. https://doi.org/10.1149/1.3206632

@inproceedings{648948859c4a4fa5ba675f2bd0712418,

title = "Crystallographic orientation dependent electrical characteristics of La2O3 MOS capacitors",

abstract = "Effect of substrate surface orientation on the properties of La 2O3 MOS capacitors was investigated. The dielectric-thickness dependence on FFB indicated that the (110) sample contains smaller amount of fixed charge than the other samples of (100) and (111). The EOT after post-metallization annealing also varied with the orientation: larger value for (111) than the other. The x-ray photoemission spectroscopy revealed that the growth of SiO2-rich silicate phase of low permittivity depends on the orientation and can change EOT. The results suggest that the (110) is preferable for small EOT and adequate FFB value when the interface-state density is significantly reduced.",

author = "H. Nakayama and K. Kakushima and P. Ahmet and E. Ikenaga and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai",

year = "2009",

doi = "10.1149/1.3206632",

language = "English",

isbn = "9781566777438",

series = "ECS Transactions",

number = "6",

pages = "339--345",

booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7",

edition = "6",

note = "7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society ; Conference date: 05-10-2009 Through 07-10-2009",

}

TY - GEN

T1 - Crystallographic orientation dependent electrical characteristics of La2O3 MOS capacitors

AU - Nakayama, H.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Ikenaga, E.

AU - Tsutsui, K.

AU - Sugii, N.

AU - Hattori, T.

AU - Iwai, H.

PY - 2009

Y1 - 2009

N2 - Effect of substrate surface orientation on the properties of La 2O3 MOS capacitors was investigated. The dielectric-thickness dependence on FFB indicated that the (110) sample contains smaller amount of fixed charge than the other samples of (100) and (111). The EOT after post-metallization annealing also varied with the orientation: larger value for (111) than the other. The x-ray photoemission spectroscopy revealed that the growth of SiO2-rich silicate phase of low permittivity depends on the orientation and can change EOT. The results suggest that the (110) is preferable for small EOT and adequate FFB value when the interface-state density is significantly reduced.

AB - Effect of substrate surface orientation on the properties of La 2O3 MOS capacitors was investigated. The dielectric-thickness dependence on FFB indicated that the (110) sample contains smaller amount of fixed charge than the other samples of (100) and (111). The EOT after post-metallization annealing also varied with the orientation: larger value for (111) than the other. The x-ray photoemission spectroscopy revealed that the growth of SiO2-rich silicate phase of low permittivity depends on the orientation and can change EOT. The results suggest that the (110) is preferable for small EOT and adequate FFB value when the interface-state density is significantly reduced.

UR - http://www.scopus.com/inward/record.url?scp=76549104943&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76549104943&partnerID=8YFLogxK

U2 - 10.1149/1.3206632

DO - 10.1149/1.3206632

M3 - Conference contribution

AN - SCOPUS:76549104943

SN - 9781566777438

T3 - ECS Transactions

SP - 339

EP - 345

BT - ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7

T2 - 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society

Y2 - 5 October 2009 through 7 October 2009

ER -