Crystallographic orientation dependent electrical characteristics of La2O3 MOS capacitors

H. Nakayama; K. Kakushima; P. Ahmet; E. Ikenaga; K. Tsutsui; N. Sugii; T. Hattori; H. Iwai

doi:10.1149/1.3206632

Crystallographic orientation dependent electrical characteristics of La₂O₃ MOS capacitors

H. Nakayama, K. Kakushima, P. Ahmet, E. Ikenaga, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Effect of substrate surface orientation on the properties of La ₂O₃ MOS capacitors was investigated. The dielectric-thickness dependence on F_FB indicated that the (110) sample contains smaller amount of fixed charge than the other samples of (100) and (111). The EOT after post-metallization annealing also varied with the orientation: larger value for (111) than the other. The x-ray photoemission spectroscopy revealed that the growth of SiO₂-rich silicate phase of low permittivity depends on the orientation and can change EOT. The results suggest that the (110) is preferable for small EOT and adequate F_FB value when the interface-state density is significantly reduced.

Original language	English
Title of host publication	ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Pages	339-345
Number of pages	7
Edition	6
DOIs	https://doi.org/10.1149/1.3206632
Publication status	Published - 2009
Externally published	Yes
Event	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria Duration: 2009 Oct 5 → 2009 Oct 7

Publication series

Name	ECS Transactions
Number	6
Volume	25
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
Country/Territory	Austria
City	Vienna
Period	09/10/5 → 09/10/7

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3206632

Cite this

Crystallographic orientation dependent electrical characteristics of La₂O₃ MOS capacitors. / Nakayama, H.; Kakushima, K.; Ahmet, P.; Ikenaga, E.; Tsutsui, K.; Sugii, N.; Hattori, T.; Iwai, H.

ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6. ed. 2009. p. 339-345 (ECS Transactions; Vol. 25, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakayama, H, Kakushima, K, Ahmet, P, Ikenaga, E, Tsutsui, K, Sugii, N, Hattori, T & Iwai, H 2009, Crystallographic orientation dependent electrical characteristics of La₂O₃ MOS capacitors. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6 edn, ECS Transactions, no. 6, vol. 25, pp. 339-345, 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society, Vienna, Austria, 09/10/5. https://doi.org/10.1149/1.3206632

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