Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals

T. Suwa, Akinobu Teramoto, Y. Kumagai, K. Abe, X. Li, Y. Nakao, M. Yamamoto, Y. Kato, T. Muro, T. Kinoshita, T. Ohmi, Takeo Hattori

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