Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals

T. Suwa, A. Teramoto, Y. Kumagai, K. Abe, X. Li, Y. Nakao, M. Yamamoto, Y. Kato, T. Muro, T. Kinoshita, T. Ohmi, T. Hattori

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Abstract

The chemical and electronic-band structures of SiO2 /Si interfaces formed utilizing oxygen radicals were investigated by measuring angle-resolved photoelectron spectra arising from Si 2p and O1s core levels and a valence band with the same probing depth. We clarified that (1) the SiO 2 /Si interfaces formed exhibited an almost abrupt compositional transition, (2) the valence band offsets at the Si(111)/Si, Si(110)/Si, and Si(551)/Si interfaces are almost the same and are 0.07 eV smaller than that at the SiO2 /Si (100) interface.

Original languageEnglish
Article number173103
JournalApplied Physics Letters
Volume96
Issue number17
DOIs
Publication statusPublished - 2010 Apr 26

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Suwa, T., Teramoto, A., Kumagai, Y., Abe, K., Li, X., Nakao, Y., Yamamoto, M., Kato, Y., Muro, T., Kinoshita, T., Ohmi, T., & Hattori, T. (2010). Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals. Applied Physics Letters, 96(17), [173103]. https://doi.org/10.1063/1.3407515