Crystallographic influence on nanomechanics of ultra-thin silicon resonators

D. F. Wang, Takahito Ono, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The influence of crystallographic orientations on nanomechanical properties of 50-nm-thick single crystalline silicon resonators was investigated by examining the effects of surface treatments, such as flash-heating and O2 adsorption on the mechanical quality factors (Q-factors) and resonant frequencies. Cantilevers with [100], [110] and [111] orientations were examined in this work. A 1500-nm-thick [100] cantilever array was also studied for comparison. The loss mechanisms in energy dissipation were discussed in terms of support loss, thermoelastic loss, as well as surface loss. The results obtained in this study provide an insight into the understanding of surface effects on nanomechanics of resonating elements, and provide design guidelines for future's nanoengineered devices for ultimate sensing.

Original languageEnglish
Title of host publicationTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages336-339
Number of pages4
ISBN (Electronic)0780377311, 9780780377318
DOIs
Publication statusPublished - 2003 Jan 1
Event12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States
Duration: 2003 Jun 82003 Jun 12

Publication series

NameTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
Volume1

Other

Other12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers
CountryUnited States
CityBoston
Period03/6/803/6/12

Keywords

  • Crystallization
  • Crystallography
  • Energy dissipation
  • Mechanical factors
  • Nanoscale devices
  • Q factor
  • Resonant frequency
  • Silicon
  • Surface treatment
  • Thermoelasticity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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