Crystallization of amorphous germanium in a silver-germanium layered system

Toyohiko J. Konno, Robert Sinclair

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We studied crystallization of amorphous germanium (a-Ge) induced in a Ag/a-Ge layered system, using in situ transmission electron microscopy (TEM) and differential scanning calorimetry (DSC). Amorphous Ge was found to crystallize at about 270°C with the heat of reaction of 10±1 kJ/mol. In situ TEM revealed that Ag grains migrate into the a-Ge phase leaving the crystalline Ge (c-Ge) phase behind. From this observation, we propose a model whereby the Ag provides the fastest path for the Ge atoms to diffuse from a-Ge to c-Ge phases.

Original languageEnglish
Title of host publicationThermodynamics and Kinetics
PublisherPubl by Materials Research Society
Pages99-104
Number of pages6
ISBN (Print)1558992073, 9781558992078
DOIs
Publication statusPublished - 1993
Externally publishedYes
EventProceedings of the Symposium on Phase Transformations in Thin Films - San Francisco, CA, USA
Duration: 1993 Apr 131993 Apr 15

Publication series

NameMaterials Research Society Symposium Proceedings
Volume311
ISSN (Print)0272-9172

Other

OtherProceedings of the Symposium on Phase Transformations in Thin Films
CitySan Francisco, CA, USA
Period93/4/1393/4/15

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Crystallization of amorphous germanium in a silver-germanium layered system'. Together they form a unique fingerprint.

Cite this