Residual stress change in silicon thin films during crystallization of amorphous silicon is discussed experimentally by detecting the wafer curvature change using a scanning laser microscope. The as-deposited amorphous-silicon film shows compressive stress of about 200 MPa. During a crystallization reaction at about 650°C, a large tensile stress of about 1000 MPa develops in the film due to film shrinkage. The final residual stress of polycrystalline film depends on the film formation process.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)