Crystallization in HfO 2 gate insulators with in situ annealing studied by valence-band photoemission and x-ray absorption spectroscopy

S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Yamashita, M. Niwa, K. Usuda, G. L. Liu

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Crystallization in HfO 2 gate insulators with in situ annealing studied by valence-band photoemission and x-ray absorption spectroscopy'. Together they form a unique fingerprint.

Physics & Astronomy