Crystallization behavior of Ge1Cu2Te3 amorphous film

Y. Sutou, T. Kamada, Y. Saito, M. Sumiya, J. Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The electrical resistance on the crystallization process of sputtered-deposited Ge1Cu2Te3 film was investigated by a two-point probe method. It was found that the amorphous Ge1Cu2Te3 film crystallized into a single Ge1Cu2Te3 phase with a chalcopyrite structure, which lead to a large resistance drop. The crystallization temperature of the Ge1Cu2Te3 amorphous film was about 250°C, which was about 70°C higher than the conventional Ge2Sb 2Te5 amorphous film. The activation energy for the crystallization of the Ge1Cu2Te3 amorphous film was higher than that of the Ge2Sb2Te5 amorphous film. The Ge1Cu2Te3 compound with a low melting point can be expected to be suitable as a phase change material for PCRAM.

Original languageEnglish
Title of host publicationPhase-Change Materials for Memory and Reconfigurable Electronics Applications
PublisherMaterials Research Society
Pages7-12
Number of pages6
ISBN (Print)9781617822186
DOIs
Publication statusPublished - 2010 Jan 1

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1251
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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