Crystallization behavior and resistance change in eutectic Si 15Te 85 amorphous films

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3 Citations (Scopus)

Abstract

Crystallization process and the corresponding electrical resistance change were investigated in eutectic Si 15Te 85 amorphous thin films. The Si 15Te 85 amorphous film showed two-stage crystallization process upon heating. In the first stage, the Si 15Te 85 amorphous crystallized into Te crystals at 175 °C. In the second stage, the residual amorphous phase crystallized into Si 2Te 3 crystals at above 300 °C accompanying the resistance drop. Before the second crystallization, the electrical resistance once increased in the temperature range of about 250-295 °C. This phenomenon can be explained by considering the formation of amorphous phase with a high electrical resistivity.

Original languageEnglish
Pages (from-to)2128-2131
Number of pages4
JournalThin Solid Films
Volume520
Issue number6
DOIs
Publication statusPublished - 2012 Jan 1

Keywords

  • Amorphous film
  • Chalcogenide
  • Crystallization
  • Electrical resistance change
  • Phase change material

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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