Crystallization behavior and resistance change in eutectic Si 15Te 85 amorphous films

Yuta Saito; Yuji Sutou; Junichi Koike

doi:10.1016/j.tsf.2011.09.012

Crystallization behavior and resistance change in eutectic Si ₁₅Te ₈₅ amorphous films

Yuta Saito, Yuji Sutou, Junichi Koike

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

Crystallization process and the corresponding electrical resistance change were investigated in eutectic Si ₁₅Te ₈₅ amorphous thin films. The Si ₁₅Te ₈₅ amorphous film showed two-stage crystallization process upon heating. In the first stage, the Si ₁₅Te ₈₅ amorphous crystallized into Te crystals at 175 °C. In the second stage, the residual amorphous phase crystallized into Si ₂Te ₃ crystals at above 300 °C accompanying the resistance drop. Before the second crystallization, the electrical resistance once increased in the temperature range of about 250-295 °C. This phenomenon can be explained by considering the formation of amorphous phase with a high electrical resistivity.

Original language	English
Pages (from-to)	2128-2131
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	6
DOIs	https://doi.org/10.1016/j.tsf.2011.09.012
Publication status	Published - 2012 Jan 1

Keywords

Amorphous film
Chalcogenide
Crystallization
Electrical resistance change
Phase change material

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2011.09.012

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Saito, Y., Sutou, Y., & Koike, J. (2012). Crystallization behavior and resistance change in eutectic Si ₁₅Te ₈₅ amorphous films. Thin Solid Films, 520(6), 2128-2131. https://doi.org/10.1016/j.tsf.2011.09.012

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abstract = "Crystallization process and the corresponding electrical resistance change were investigated in eutectic Si 15Te 85 amorphous thin films. The Si 15Te 85 amorphous film showed two-stage crystallization process upon heating. In the first stage, the Si 15Te 85 amorphous crystallized into Te crystals at 175 °C. In the second stage, the residual amorphous phase crystallized into Si 2Te 3 crystals at above 300 °C accompanying the resistance drop. Before the second crystallization, the electrical resistance once increased in the temperature range of about 250-295 °C. This phenomenon can be explained by considering the formation of amorphous phase with a high electrical resistivity.",

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N2 - Crystallization process and the corresponding electrical resistance change were investigated in eutectic Si 15Te 85 amorphous thin films. The Si 15Te 85 amorphous film showed two-stage crystallization process upon heating. In the first stage, the Si 15Te 85 amorphous crystallized into Te crystals at 175 °C. In the second stage, the residual amorphous phase crystallized into Si 2Te 3 crystals at above 300 °C accompanying the resistance drop. Before the second crystallization, the electrical resistance once increased in the temperature range of about 250-295 °C. This phenomenon can be explained by considering the formation of amorphous phase with a high electrical resistivity.

AB - Crystallization process and the corresponding electrical resistance change were investigated in eutectic Si 15Te 85 amorphous thin films. The Si 15Te 85 amorphous film showed two-stage crystallization process upon heating. In the first stage, the Si 15Te 85 amorphous crystallized into Te crystals at 175 °C. In the second stage, the residual amorphous phase crystallized into Si 2Te 3 crystals at above 300 °C accompanying the resistance drop. Before the second crystallization, the electrical resistance once increased in the temperature range of about 250-295 °C. This phenomenon can be explained by considering the formation of amorphous phase with a high electrical resistivity.

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