Crystallization and reconstructive layer transformation of a-Si/Au multilayer thin films under a strong gravitational field

Yoichi Okamoto; Masami Aono; Hisashi Miyazaki; Yudai Ogata; Makoto Tokuda; Tamotsu Mashimo

doi:10.4028/www.scientific.net/DDF.363.156

Crystallization and reconstructive layer transformation of a-Si/Au multilayer thin films under a strong gravitational field

Yoichi Okamoto, Masami Aono, Hisashi Miyazaki, Yudai Ogata, Makoto Tokuda, Tamotsu Mashimo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

There were still unclear questions in the new method that fabricate the high quality poly crystalline Si thin film from amorphous Si thin film with lower annealing temperature than conventional Si recrystallization temperature. In that recrystallization process, the recrystallization mechanism was generally explained by the MIC (Metal Induced Crystallization) of Au. In this paper, we have discussed the effects of film structure and strong gravity on recrystallization, by using conventional furnace and high-temperature ultracentrifuge furnace system. The five kinds of samples (two bilayered Si/Au thin films, two multilayered Si/Au thin films and trilayered Si/Au/Si thin film) and found the effects of structure and strong gravity. The best for crystallization was Au/Si multilayered thin film, which is almost finished to crystallize even at 673 K annealing. The strong gravity advanced and retreated the crystallization, depending to thin film structure.

Original language	English
Title of host publication	Diffusion in Materials
Editors	S.V. Divinski, N.A. Stolwijk, H. Bracht
Publisher	Trans Tech Publications Ltd
Pages	156-163
Number of pages	8
Volume	363
ISBN (Print)	9783038354277
DOIs	https://doi.org/10.4028/www.scientific.net/DDF.363.156
Publication status	Published - 2015
Externally published	Yes
Event	International Conference on Diffusion in Materials, DIMAT 2014 - Munster, Germany Duration: 2014 Aug 17 → 2014 Aug 22

Other

Other	International Conference on Diffusion in Materials, DIMAT 2014
Country	Germany
City	Munster
Period	14/8/17 → 14/8/22

Keywords

Au
Crystallization
Gravity
Si
Thin film

ASJC Scopus subject areas

Radiation
Materials Science(all)
Condensed Matter Physics

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Okamoto, Y., Aono, M., Miyazaki, H., Ogata, Y., Tokuda, M., & Mashimo, T. (2015). Crystallization and reconstructive layer transformation of a-Si/Au multilayer thin films under a strong gravitational field. In S. V. Divinski, N. A. Stolwijk, & H. Bracht (Eds.), Diffusion in Materials (Vol. 363, pp. 156-163). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/DDF.363.156

Crystallization and reconstructive layer transformation of a-Si/Au multilayer thin films under a strong gravitational field. / Okamoto, Yoichi; Aono, Masami; Miyazaki, Hisashi; Ogata, Yudai; Tokuda, Makoto; Mashimo, Tamotsu.

Diffusion in Materials. ed. / S.V. Divinski; N.A. Stolwijk; H. Bracht. Vol. 363 Trans Tech Publications Ltd, 2015. p. 156-163.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Okamoto, Y, Aono, M, Miyazaki, H, Ogata, Y, Tokuda, M & Mashimo, T 2015, Crystallization and reconstructive layer transformation of a-Si/Au multilayer thin films under a strong gravitational field. in SV Divinski, NA Stolwijk & H Bracht (eds), Diffusion in Materials. vol. 363, Trans Tech Publications Ltd, pp. 156-163, International Conference on Diffusion in Materials, DIMAT 2014, Munster, Germany, 14/8/17. https://doi.org/10.4028/www.scientific.net/DDF.363.156

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AB - There were still unclear questions in the new method that fabricate the high quality poly crystalline Si thin film from amorphous Si thin film with lower annealing temperature than conventional Si recrystallization temperature. In that recrystallization process, the recrystallization mechanism was generally explained by the MIC (Metal Induced Crystallization) of Au. In this paper, we have discussed the effects of film structure and strong gravity on recrystallization, by using conventional furnace and high-temperature ultracentrifuge furnace system. The five kinds of samples (two bilayered Si/Au thin films, two multilayered Si/Au thin films and trilayered Si/Au/Si thin film) and found the effects of structure and strong gravity. The best for crystallization was Au/Si multilayered thin film, which is almost finished to crystallize even at 673 K annealing. The strong gravity advanced and retreated the crystallization, depending to thin film structure.

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