Crystallization and reconstructive layer transformation of a-Si/Au multilayer thin films under a strong gravitational field

Yoichi Okamoto, Masami Aono, Hisashi Miyazaki, Yudai Ogata, Makoto Tokuda, Tamotsu Mashimo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

There were still unclear questions in the new method that fabricate the high quality poly crystalline Si thin film from amorphous Si thin film with lower annealing temperature than conventional Si recrystallization temperature. In that recrystallization process, the recrystallization mechanism was generally explained by the MIC (Metal Induced Crystallization) of Au. In this paper, we have discussed the effects of film structure and strong gravity on recrystallization, by using conventional furnace and high-temperature ultracentrifuge furnace system. The five kinds of samples (two bilayered Si/Au thin films, two multilayered Si/Au thin films and trilayered Si/Au/Si thin film) and found the effects of structure and strong gravity. The best for crystallization was Au/Si multilayered thin film, which is almost finished to crystallize even at 673 K annealing. The strong gravity advanced and retreated the crystallization, depending to thin film structure.

Original languageEnglish
Title of host publicationDiffusion in Materials
EditorsS.V. Divinski, N.A. Stolwijk, H. Bracht
PublisherTrans Tech Publications Ltd
Pages156-163
Number of pages8
Volume363
ISBN (Print)9783038354277
DOIs
Publication statusPublished - 2015
Externally publishedYes
EventInternational Conference on Diffusion in Materials, DIMAT 2014 - Munster, Germany
Duration: 2014 Aug 172014 Aug 22

Other

OtherInternational Conference on Diffusion in Materials, DIMAT 2014
CountryGermany
CityMunster
Period14/8/1714/8/22

Keywords

  • Au
  • Crystallization
  • Gravity
  • Si
  • Thin film

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Condensed Matter Physics

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