Crystallization and electrical characteristics of Ge 1Cu 2Te 3 films for phase change random access memory

Toshiya Kamada, Yuji Sutou, Masashi Sumiya, Yuta Saito, Junichi Koike

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


Phase change random access memory (PCRAM) requires an advanced phase change material to lower its power consumption and to enhance its data retention and endurance abilities. The present work investigated the crystallization behaviors and electrical properties of Ge 1Cu 2Te 3 compound films with a low melting point of about 500 °C for PCRAM application. Sputter-deposited Ge 1Cu 2Te 3 amorphous films showed a high crystallization temperature of about 250 °C. The Ge 1Cu 2Te 3 amorphous film showed an electrical resistance decrease of over 10 2-fold and exhibited a small increase in thickness of 2.0% upon crystallization. The Ge 1Cu 2Te 3 memory devices showed reversible switching behaviors and exhibited a 10% lower power consumption for the reset operation than the conventional Ge 2Sb 2Te 5 memory devices. Therefore, the Ge 1Cu 2Te 3 compound is a promising phase change material for PCRAM application.

Original languageEnglish
Pages (from-to)4389-4393
Number of pages5
JournalThin Solid Films
Issue number13
Publication statusPublished - 2012 Apr 30


  • Crystallization
  • Ge-Cu-Te
  • Memory switching
  • Phase change material
  • Volume change

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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