Crystallization and chemical structures with annealing in Zr O2 gate insulators studied by photoemission spectroscopy and x-ray absorption spectroscopy

J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Usuda, M. Niwa, G. L. Liu

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

We have performed photoemission spectroscopy and x-ray absorption spectroscopy (XAS) to investigate the chemical states and the crystallization from the amorphous structure by annealing of the Zr O2 gate insulators on Si. Angular-dependent core-level photoemission spectra revealed the chemical states including the interfacial layers. Annealing-temperature dependence in valence-band spectra and XAS revealed the relationship between crystallization and the changes in spectral line shapes although core-level photoemission spectra are not sensitive to the crystallization. Valence-band spectra are split into double peak structures and the line shapes of O K -edge x-ray absorption spectra become sharp by the annealing at 800°C corresponding to the crystallization temperature of amorphous Zr O2 films. It suggests that the valence-band spectra and XAS can be utilized to characterize the crystallization features in the gate insulators.

Original languageEnglish
Pages (from-to)1554-1557
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume23
Issue number6
DOIs
Publication statusPublished - 2005 Nov 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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