We have performed photoemission spectroscopy and x-ray absorption spectroscopy (XAS) to investigate the chemical states and the crystallization from the amorphous structure by annealing of the Zr O2 gate insulators on Si. Angular-dependent core-level photoemission spectra revealed the chemical states including the interfacial layers. Annealing-temperature dependence in valence-band spectra and XAS revealed the relationship between crystallization and the changes in spectral line shapes although core-level photoemission spectra are not sensitive to the crystallization. Valence-band spectra are split into double peak structures and the line shapes of O K -edge x-ray absorption spectra become sharp by the annealing at 800°C corresponding to the crystallization temperature of amorphous Zr O2 films. It suggests that the valence-band spectra and XAS can be utilized to characterize the crystallization features in the gate insulators.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2005 Nov 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films