Crystallinity of GaN film grown by ECR plasma-excited MOVPE

Hirotsugu Sato, Toru Sasaki, Takashi Matsuoka, Akinori Katsui

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In the ECR plasma-excited MOVPE of GaN film, a strong correlation was found between carbon incorporation into the film and the crystallinity change from single crystal to polycrystal. Mass spectroscopic analysis showed that undissociated TMGa in the ECR plasma played an important role in the crystallinity change mechanism.

Original languageEnglish
Pages (from-to)1654-1655
Number of pages2
JournalJapanese journal of applied physics
Volume29
Issue number9R
DOIs
Publication statusPublished - 1990 Sep
Externally publishedYes

Keywords

  • Carbon incorporation
  • Crystallinity change
  • ECR plasma-excited MOVPE
  • Gan
  • Mass spectrum
  • TMGa

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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