Crystallinity investigation of compositionally graded SiGe layers by synchrotron X-ray cross-sectional diffraction

Takeshi Senda, Koji Izunome, Yoshiyuki Tsusaka, Kazunori Fukuda, Kazuki Hayashi, Maiko Abe, Sayuri Takahata, Hidekazu Takano, Yasushi Kagoshima, Junji Matsui

Research output: Contribution to journalArticlepeer-review

Abstract

We have investigated the crystallinity of compositionally graded SiGe layers of strained Si (s-Si) wafers in the growth direction by irradiating a synchrotron X-ray microbeam with a high parallelism on a cross section of s-Si wafers. As a result, we can confirm the presence of surface parallel SiGe lattice rotation and lattice rotation distribution (LRD). The surface parallel LRD and relaxation ratio of SiGe start to decrease in the depth direction below approximately 3 μm from the wafer surface. It is inferred that the insufficient relaxation of SiGe near the wafer surface is caused by the characteristics of the free wafer surface. Furthermore, such characteristics are thought to lead to a reduction in LRD near the wafer surface.

Original languageEnglish
Pages (from-to)6241-6246
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume47
Issue number8 PART 1
DOIs
Publication statusPublished - 2008 Aug 8
Externally publishedYes

Keywords

  • Compositionally graded SiGe
  • Cross section
  • Lattice tilt, lattice rotation
  • Misfit dislocation
  • Strained silicon
  • Synchrotron X-ray microbeam
  • Threading dislocation
  • X-ray diffraction

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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