@inproceedings{1d0e9c640fee425083bd95fed30877d6,
title = "Crystallinity improvement of ferroelectric BiFeO3 thin film by oxygen radical treatment",
abstract = "Oxygen radical treatment was applied to sputter-deposited BiFeO3 (BFO) thin film which is expected to be used for ferroelectric memories, sensors and solar cells. The oxygen radicals were produced by a microwave excited high-density Kr/O2 plasma. It was found from X-ray diffraction (XRD) that the crystallization temperature of the BFO film could be reduced to 350 °C by applying the oxygen radical treatment before the annealing. The (110) peak area which shows the crystallinity of BFO was by 4 times than that of the BFO film annealed at 500 °C without the oxygen radical treatment. From results of XRD and X-ray photoelectron spectroscopy (XPS), the stoichiometry was dramatically improved and this suggests that the oxygen radical treatment effectively creates the nucleation cites of BiFeO3 and reduces oxygen vacancy defects.",
author = "F. Imaizumi and T. Goto and A. Teramoto and S. Sugawa and T. Ohmi",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Advanced CMOS-Compatible Semiconductor Devices 17 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",
year = "2015",
doi = "10.1149/06605.0261ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "261--267",
editor = "Y. Omura and Martino, {J. A.} and Raskin, {J. P.} and S. Selberherr and H. Ishii and F. Gamiz and Nguyen, {B. Y.}",
booktitle = "Advanced CMOS-Compatible Semiconductor Devices 17",
edition = "5",
}