Crystallinity improvement of ferroelectric BiFeO3 thin film by oxygen radical treatment

F. Imaizumi, T. Goto, A. Teramoto, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Oxygen radical treatment was applied to sputter-deposited BiFeO3 (BFO) thin film which is expected to be used for ferroelectric memories, sensors and solar cells. The oxygen radicals were produced by a microwave excited high-density Kr/O2 plasma. It was found from X-ray diffraction (XRD) that the crystallization temperature of the BFO film could be reduced to 350 °C by applying the oxygen radical treatment before the annealing. The (110) peak area which shows the crystallinity of BFO was by 4 times than that of the BFO film annealed at 500 °C without the oxygen radical treatment. From results of XRD and X-ray photoelectron spectroscopy (XPS), the stoichiometry was dramatically improved and this suggests that the oxygen radical treatment effectively creates the nucleation cites of BiFeO3 and reduces oxygen vacancy defects.

Original languageEnglish
Title of host publicationAdvanced CMOS-Compatible Semiconductor Devices 17
EditorsY. Omura, J. A. Martino, J. P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B. Y. Nguyen
PublisherElectrochemical Society Inc.
Pages261-267
Number of pages7
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015
EventSymposium on Advanced CMOS-Compatible Semiconductor Devices 17 - 227th ECS Meeting - Chicago, United States
Duration: 2015 May 242015 May 28

Publication series

NameECS Transactions
Number5
Volume66
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Advanced CMOS-Compatible Semiconductor Devices 17 - 227th ECS Meeting
CountryUnited States
CityChicago
Period15/5/2415/5/28

ASJC Scopus subject areas

  • Engineering(all)

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