Crystallinity evaluation of phosphorus-doped n-type diamond thin film

M. Shimomura, T. Nishimori, Tadashi Abukawa, Yuji Takakuwa, H. Sakamoto, S. Kono

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The crystallinity of the phosphorus-doped, n-type diamond thin film as grown by gas source molecular beam epitaxy (GSMBE) was examined by both atomic force microscopy (AFM) and X-ray photoelectron diffraction (XPD). AFM showed that the GSMBE growth is not an island-growth type that hinders the application of XPD. AFM, however, showed polishing-related rugged surface features even on the substrate which may cause the poor quality of in situ reflection high-energy electron diffraction (RHEED) patterns as found before.

Original languageEnglish
Pages (from-to)3931-3933
Number of pages3
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - 1999 Apr 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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