The crystallinity of the phosphorus-doped, n-type diamond thin film as grown by gas source molecular beam epitaxy (GSMBE) was examined by both atomic force microscopy (AFM) and X-ray photoelectron diffraction (XPD). AFM showed that the GSMBE growth is not an island-growth type that hinders the application of XPD. AFM, however, showed polishing-related rugged surface features even on the substrate which may cause the poor quality of in situ reflection high-energy electron diffraction (RHEED) patterns as found before.
ASJC Scopus subject areas
- Physics and Astronomy(all)