@inproceedings{a0c3bf9693634716a842efccc96efaf4,
title = "Crystallinity and internal strain of one-dimensionally long Si grains by CW laser lateral crystallization",
abstract = "Continuous-wave (CW) laser lateral crystallized silicon (Si) thin films were investigated. CW laser with a wavelength λ of 532 nm was applied to crystallization. In the CW laser lateral crystallization (CLC), a gradual temperature slope in Si thin films was farmed and one-dimensionally long grains with a typical length of 20 μm were achieved. The most dominant grain growth direction was <110> direction. σ3, 9, and 11 boundaries were mainly observed between adjacent grains. It was found that crystallization was performed to form stable grain boundaries. It was also clarified that CLC poly-Si thin films have large tensile strain corresponding to 0.6% of single crystalline Si lattice in in-plane direction. This strain was induced by the difference in thermal expansion coefficients between Si thin films and the buffer SiO2 films.",
author = "Shuntaro Fujii and Kuroki, {Shin Ichiro} and Xiaoli Zhu and Masayuki Numata and Koji Kotani and Takashi Ito",
year = "2008",
month = dec,
day = "1",
doi = "10.1149/1.2980543",
language = "English",
isbn = "9781566776554",
series = "ECS Transactions",
number = "9",
pages = "145--151",
booktitle = "ECS Transactions - Thin Film Transistors 9, TFT 9",
edition = "9",
note = "Thin Film Transistors 9, TFT 9 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 16-10-2008",
}