Crystallinity and internal strain of one-dimensionally long Si grains by CW laser lateral crystallization

Shuntaro Fujii, Shin Ichiro Kuroki, Xiaoli Zhu, Masayuki Numata, Koji Kotani, Takashi Ito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Continuous-wave (CW) laser lateral crystallized silicon (Si) thin films were investigated. CW laser with a wavelength λ of 532 nm was applied to crystallization. In the CW laser lateral crystallization (CLC), a gradual temperature slope in Si thin films was farmed and one-dimensionally long grains with a typical length of 20 μm were achieved. The most dominant grain growth direction was <110> direction. σ3, 9, and 11 boundaries were mainly observed between adjacent grains. It was found that crystallization was performed to form stable grain boundaries. It was also clarified that CLC poly-Si thin films have large tensile strain corresponding to 0.6% of single crystalline Si lattice in in-plane direction. This strain was induced by the difference in thermal expansion coefficients between Si thin films and the buffer SiO2 films.

Original languageEnglish
Title of host publicationECS Transactions - Thin Film Transistors 9, TFT 9
Pages145-151
Number of pages7
Edition9
DOIs
Publication statusPublished - 2008 Dec 1
EventThin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 16

Publication series

NameECS Transactions
Number9
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherThin Film Transistors 9, TFT 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1308/10/16

ASJC Scopus subject areas

  • Engineering(all)

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