Crystalline phases, microstructures and electrical properties of hafnium oxide films deposited by sol-gel method

Zhan Jie Wang, Toshihide Kumagai, Hiroyuki Kokawa, Jiunnjye Tsuaur, Masaaki Ichiki, Ryutaro Maeda

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

Hafnium oxide (HfO2) films were grown on SiO2/Si and Pt/Ti/SiO2/Si substrates by a sol-gel method, and their crystalline structure, microstructure and electrical properties were investigated. XRD analysis indicated that the monoclinic HfO2 films can be obtained by annealing at 500 °C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO2 films of 300 nm was approximately 21.6, and the current-voltage measurements showed that the leakage current density of the HfO2 films was approximately 1.14×10-5 A/cm2 at an applied electric field of 100 kV/cm.

Original languageEnglish
Pages (from-to)452-457
Number of pages6
JournalJournal of Crystal Growth
Volume281
Issue number2-4
DOIs
Publication statusPublished - 2005 Aug 1

Keywords

  • A1. Crystal structure
  • A1. X-ray diffraction
  • B1. Oxides
  • B2. Dielectric materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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