Crystalline Electric Field Level Scheme of the Non‐Centrosymmetric CePtSi3

Daichi Ueta, Tomohiro Kobuke, Masahiro Yoshida, Hideki Yoshizawa, Yoichi Ikeda, Shinichi Itoh, Tetsuya Yokoo

Research output: Contribution to journalArticle

Abstract

The crystalline electric field (CEF) excitations in CePtSi3 with the non-centrosymmetric structure were investigated by inelastic neutron scattering (INS) experiment. CEF excitations were observed at 5.3 and 17.5 meV. We discuss the CEF parameters and wave function of CePtSi3 by comparing those of other CeTX3(T: transition metal, X: Si, Ge) systems.

Original languageEnglish
Pages (from-to)21-23
Number of pages3
JournalPhysica B: Condensed Matter
Volume536
DOIs
Publication statusPublished - 2018 May 1

Keywords

  • Antisymmetric spin-orbit interaction
  • Crystalline electric field
  • f-electron

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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