Crystalline Defects in Silicon Wafer Caused by Prolonged High-Temperature Annealing in Nitrogen Atmosphere

Haruo Nakazawa, Masaaki Ogino, Hideaki Teranishi, Yoshikazu Takahashi, Hitoshi Habuka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A floating zone (FZ) silicon wafer produced from a Czochralski (CZ) single-crystal ingot was subjected to prolonged annealing at a high temperature. Precipitates were formed in a N2(70%)+O2(30%) ambient atmosphere. The precipitate regions manifested themselves as dark concentric rings in the X-ray topographs. According to the results of cross-sectional transmission electron microscopy observations and energy-dispersive X-ray spectroscopy elemental analyses, nitrogen was distributed throughout the precipitate regions, while oxygen was rich in the periphery of the regions. A high concentration of nitrogen was also directly detected by secondary ion mass spectrometry in the mid-depth of the wafer in the precipitate regions. Electron diffraction analysis of the precipitates showed that their phase was α-Si3N4.

Original languageEnglish
Title of host publicationMaterials Science and Chemical Engineering
Pages445-449
Number of pages5
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013 - , Singapore
Duration: 2013 Feb 202013 Feb 21

Publication series

NameAdvanced Materials Research
Volume699
ISSN (Print)1022-6680

Other

Other2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013
CountrySingapore
Period13/2/2013/2/21

Keywords

  • Crystalline Defect
  • Floating Zone Silicon Wafer
  • Precipitate
  • a-SiN

ASJC Scopus subject areas

  • Engineering(all)

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