We reported the characterization of a series of semiconducting polymers based on naphthodithiophenes (NDTs) and naphthobisthiadiazole (NTz). Four different isomeric NDTs are selectively synthesized using the similar synthetic protocol. The isomeric NDTs provide quite distinct electronic structures and crystallinity of the corresponding polymers and thus the device performances. Polymers with one of the NDT isomers, NDT3, showed high hole mobilities in excess of 0.5 cm2/Vs. On the other hand, an NTz-based polymer exhibited high hole mobility of >0.5 cm2/Vs in OFETs and power conversion efficiencies of >7% in OPVs. These high performances of the present polymers are found to originate in their highly crystalline structures in the thin films.
|Journal||IOP Conference Series: Materials Science and Engineering|
|Publication status||Published - 2014|
|Event||Tsukuba International Conference on Materials Science, TICMS 2013 - Tsukuba, Japan|
Duration: 2013 Aug 28 → 2013 Sep 6
ASJC Scopus subject areas
- Materials Science(all)