Abstract
Binary alloy Schottky contacts on ZnO are developed using the combinatorial ion beam deposition system. The compositional fraction of the Schottky binary alloy was continuously changed by the composition spread technique. Pt-Ru alloy composition spreads were deposited as the Schottky metal alloys. It was shown that the compositional fraction of the Schottky binary alloys changed continuously. A Pt-Ru alloy metal film was grown on o-polar ZnP epitaxialy, and its crystal structures changed from the Pt-phase (cubic structure) to the Ru-phase (hexagonal structure) in the Pt-Ru alloy phase diagram. Schottky barrier heights determined by current-voltage measurements increased with increasing Pt content. By combining the ion beam deposition and combinatorial system, the Schottky barrier heights of the Schottky binary alloys have been controlled systematically.
| Original language | English |
|---|---|
| Pages (from-to) | 2907-2909 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 46 |
| Issue number | 5 A |
| DOIs | |
| Publication status | Published - 2007 May 8 |
| Externally published | Yes |
Keywords
- Ion beam deposition
- Photodiode
- Schottky
- ZnO
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)