Crystal structure and thermoelectric properties of lightly substituted higher manganese silicides

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11 Citations (Scopus)

Abstract

The dissipation of MnSi layered precipitates during solidification is critical for further enhancement of the thermoelectric properties of the higher manganese silicides. We have investigated the effects of partial substitution of V in Mn sites and of Ge in Si sites on the crystal structures and thermoelectric properties of these silicides in detail. As previously reported, a small amount of V-substitution is quite effective in completely dissipating the MnSi striations; in contrast, a small proportion of these MnSi striations always remains present in the Ge-substitution case, even in the vicinity of the Ge solubility limits. For completely MnSi-dissipated samples, domain separation of the regular and highly strained arrangements of the Si atoms is realized. This domain separation suppresses the deterioration of the carrier mobility of the partially V-substituted samples and maintains even higher electrical conductivity to yield a high thermoelectric power factor of ~2.3 mW/K2m at higher temperatures.

Original languageEnglish
Article number926
JournalMaterials
Volume11
Issue number6
DOIs
Publication statusPublished - 2018 May 30

Keywords

  • Crystal structure
  • Domain separation
  • Higher manganese silicide
  • Incommensurate composite crystal;MnSi striation
  • Solid solution
  • Thermoelectric properties

ASJC Scopus subject areas

  • Materials Science(all)

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