TY - JOUR
T1 - Crystal structure and growth of carbon-silicon mixture film prepared by ion sputtering
AU - Kimura, Yuki
AU - Ishikawa, M.
AU - Kurumada, M.
AU - Tanigaki, T.
AU - Suzuki, H.
AU - Kaito, C.
PY - 2005/2/15
Y1 - 2005/2/15
N2 - Si (10-50%)-containing carbon (C-Si) films were prepared by ion sputtering of carbon and silicon carbide mixture pellets. The C-Si film was composed of a solid-solution phase of carbon and silicon with a diamond structure. The film showed a higher transparency than a simultaneously evaporated C-Si mixture film. Diamond crystals 100 nm in diameter were also produced by vacuum heating of C-Si film at 800°C. The infrared spectrum showed significant absorption features at 9.5 and 21μm, in contrast to the 11 and 12μm of SiC. The 21μm feature is one of the candidate unidentified infrared bands on the spectra of carbon-rich post-asymptotic giant branch stars.
AB - Si (10-50%)-containing carbon (C-Si) films were prepared by ion sputtering of carbon and silicon carbide mixture pellets. The C-Si film was composed of a solid-solution phase of carbon and silicon with a diamond structure. The film showed a higher transparency than a simultaneously evaporated C-Si mixture film. Diamond crystals 100 nm in diameter were also produced by vacuum heating of C-Si film at 800°C. The infrared spectrum showed significant absorption features at 9.5 and 21μm, in contrast to the 11 and 12μm of SiC. The 21μm feature is one of the candidate unidentified infrared bands on the spectra of carbon-rich post-asymptotic giant branch stars.
KW - A1. Crystal structure
KW - A1. Nanostructures
KW - B1. Diamonds
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U2 - 10.1016/j.jcrysgro.2004.11.151
DO - 10.1016/j.jcrysgro.2004.11.151
M3 - Conference article
AN - SCOPUS:15844381556
VL - 275
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-2
ER -