Crystal structure and electrical properties of {100}-oriented epitaxial BiCoO3-BiFeO3 films grown by metalorganic chemical vapor deposition

Shintaro Yasui; Hiroshi Naganuma; Soichiro Okamura; Ken Nishida; Takashi Yamamoto; Takashi Iijima; Masaki Azuma; Hitoshi Morioka; Keisuke Saito; Mutsuo Ishikawa; Tomoaki Yamada; Hiroshi Funakubo

doi:10.1143/JJAP.47.7582

Crystal structure and electrical properties of {100}-oriented epitaxial BiCoO₃-BiFeO₃ films grown by metalorganic chemical vapor deposition

Shintaro Yasui, Hiroshi Naganuma, Soichiro Okamura, Ken Nishida, Takashi Yamamoto, Takashi Iijima, Masaki Azuma, Hitoshi Morioka, Keisuke Saito, Mutsuo Ishikawa, Tomoaki Yamada, Hiroshi Funakubo

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

_xBiCoO₃-(1- x)BiFeO₃ (x = 0-0.22) films of 400 nm thickness were grown on (100)_c SrRuO₃ ∥ (100) SrTiO₃ substrates by metalorganic chemical vapor deposition. The changes in the crystal structure and electrical properties of the films with x were investigated. The constituent phase changed from rhombohedral to a mixture of rhombohedral and tetragonal, and to tetragonal with increasing x, but the x for this transition is different from that of 200-nm-thick films grown on (100) SrTiO₃ substrates. The x of the morphotropic phase boundary that consisted of a mixture of tetragonal and rhombohedral symmetries depended on the film thickness. The remanant polarization continuously decreased with increasing x, in good agreement with the results obtained with the {100}-oriented Pb(Zr,Ti)O₃ epitaxial films owing to the decrease in the crystal anisotropy of the films.

Original language	English
Pages (from-to)	7582-7585
Number of pages	4
Journal	Japanese journal of applied physics
Volume	47
Issue number	9 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.7582
Publication status	Published - 2008 Sep 19
Externally published	Yes

Keywords

BiCoO-BiFeO solid solution
Crystal structure
Electric property
Epitaxial film
Lead-free material
MOCVD

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.47.7582

Cite this

Yasui, S., Naganuma, H., Okamura, S., Nishida, K., Yamamoto, T., Iijima, T., Azuma, M., Morioka, H., Saito, K., Ishikawa, M., Yamada, T., & Funakubo, H. (2008). Crystal structure and electrical properties of {100}-oriented epitaxial BiCoO₃-BiFeO₃ films grown by metalorganic chemical vapor deposition. Japanese journal of applied physics, 47(9 PART 2), 7582-7585. https://doi.org/10.1143/JJAP.47.7582

Crystal structure and electrical properties of {100}-oriented epitaxial BiCoO₃-BiFeO₃ films grown by metalorganic chemical vapor deposition. / Yasui, Shintaro; Naganuma, Hiroshi; Okamura, Soichiro; Nishida, Ken; Yamamoto, Takashi; Iijima, Takashi; Azuma, Masaki; Morioka, Hitoshi; Saito, Keisuke; Ishikawa, Mutsuo; Yamada, Tomoaki; Funakubo, Hiroshi.

In: Japanese journal of applied physics, Vol. 47, No. 9 PART 2, 19.09.2008, p. 7582-7585.

Research output: Contribution to journal › Article › peer-review

Yasui, S, Naganuma, H, Okamura, S, Nishida, K, Yamamoto, T, Iijima, T, Azuma, M, Morioka, H, Saito, K, Ishikawa, M, Yamada, T & Funakubo, H 2008, 'Crystal structure and electrical properties of {100}-oriented epitaxial BiCoO₃-BiFeO₃ films grown by metalorganic chemical vapor deposition', Japanese journal of applied physics, vol. 47, no. 9 PART 2, pp. 7582-7585. https://doi.org/10.1143/JJAP.47.7582

Yasui, Shintaro ; Naganuma, Hiroshi ; Okamura, Soichiro ; Nishida, Ken ; Yamamoto, Takashi ; Iijima, Takashi ; Azuma, Masaki ; Morioka, Hitoshi ; Saito, Keisuke ; Ishikawa, Mutsuo ; Yamada, Tomoaki ; Funakubo, Hiroshi. / Crystal structure and electrical properties of {100}-oriented epitaxial BiCoO₃-BiFeO₃ films grown by metalorganic chemical vapor deposition. In: Japanese journal of applied physics. 2008 ; Vol. 47, No. 9 PART 2. pp. 7582-7585.

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abstract = "xBiCoO3-(1- x)BiFeO3 (x = 0-0.22) films of 400 nm thickness were grown on (100)c SrRuO3 ∥ (100) SrTiO3 substrates by metalorganic chemical vapor deposition. The changes in the crystal structure and electrical properties of the films with x were investigated. The constituent phase changed from rhombohedral to a mixture of rhombohedral and tetragonal, and to tetragonal with increasing x, but the x for this transition is different from that of 200-nm-thick films grown on (100) SrTiO3 substrates. The x of the morphotropic phase boundary that consisted of a mixture of tetragonal and rhombohedral symmetries depended on the film thickness. The remanant polarization continuously decreased with increasing x, in good agreement with the results obtained with the {100}-oriented Pb(Zr,Ti)O3 epitaxial films owing to the decrease in the crystal anisotropy of the films.",

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AB - xBiCoO3-(1- x)BiFeO3 (x = 0-0.22) films of 400 nm thickness were grown on (100)c SrRuO3 ∥ (100) SrTiO3 substrates by metalorganic chemical vapor deposition. The changes in the crystal structure and electrical properties of the films with x were investigated. The constituent phase changed from rhombohedral to a mixture of rhombohedral and tetragonal, and to tetragonal with increasing x, but the x for this transition is different from that of 200-nm-thick films grown on (100) SrTiO3 substrates. The x of the morphotropic phase boundary that consisted of a mixture of tetragonal and rhombohedral symmetries depended on the film thickness. The remanant polarization continuously decreased with increasing x, in good agreement with the results obtained with the {100}-oriented Pb(Zr,Ti)O3 epitaxial films owing to the decrease in the crystal anisotropy of the films.

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