Crystal structure and electrical properties of {100}-oriented epitaxial BiCoO3-BiFeO3 films grown by metalorganic chemical vapor deposition

Shintaro Yasui, Hiroshi Naganuma, Soichiro Okamura, Ken Nishida, Takashi Yamamoto, Takashi Iijima, Masaki Azuma, Hitoshi Morioka, Keisuke Saito, Mutsuo Ishikawa, Tomoaki Yamada, Hiroshi Funakubo

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33 Citations (Scopus)

Abstract

xBiCoO3-(1- x)BiFeO3 (x = 0-0.22) films of 400 nm thickness were grown on (100)c SrRuO3 ∥ (100) SrTiO3 substrates by metalorganic chemical vapor deposition. The changes in the crystal structure and electrical properties of the films with x were investigated. The constituent phase changed from rhombohedral to a mixture of rhombohedral and tetragonal, and to tetragonal with increasing x, but the x for this transition is different from that of 200-nm-thick films grown on (100) SrTiO3 substrates. The x of the morphotropic phase boundary that consisted of a mixture of tetragonal and rhombohedral symmetries depended on the film thickness. The remanant polarization continuously decreased with increasing x, in good agreement with the results obtained with the {100}-oriented Pb(Zr,Ti)O3 epitaxial films owing to the decrease in the crystal anisotropy of the films.

Original languageEnglish
Pages (from-to)7582-7585
Number of pages4
JournalJapanese journal of applied physics
Volume47
Issue number9 PART 2
DOIs
Publication statusPublished - 2008 Sep 19
Externally publishedYes

Keywords

  • BiCoO-BiFeO solid solution
  • Crystal structure
  • Electric property
  • Epitaxial film
  • Lead-free material
  • MOCVD

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Yasui, S., Naganuma, H., Okamura, S., Nishida, K., Yamamoto, T., Iijima, T., Azuma, M., Morioka, H., Saito, K., Ishikawa, M., Yamada, T., & Funakubo, H. (2008). Crystal structure and electrical properties of {100}-oriented epitaxial BiCoO3-BiFeO3 films grown by metalorganic chemical vapor deposition. Japanese journal of applied physics, 47(9 PART 2), 7582-7585. https://doi.org/10.1143/JJAP.47.7582