Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy

T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki, K. Nakajima

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

We performed homoepitaxial growth of 6H-SiC layers on substrates including micropipes by the LPE method and evaluated the crystal quality by Raman scattering spectroscopy. In particular, we focused on the crystal quality of layers covering micropipes. It was made clear that there is no stress due to morphological macroscopic defects in the crystal over micropipes. Moreover, LPE growth not only closes a micropipe but also reduces the inhomogeneity of carrier density which exists in the area of the micropipe before growth.

Original languageEnglish
Pages (from-to)633-636
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberI
DOIs
Publication statusPublished - 2004 Jan 1
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: 2003 Oct 52003 Oct 10

Keywords

  • 6H-SIC
  • Carrier density
  • Crystal quality
  • LPE
  • Micropipe
  • Raman spectroscopy
  • Stress

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy'. Together they form a unique fingerprint.

  • Cite this