Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices

Mizue Ishikawa, Makoto Tsukahara, Syuta Honda, Yuichi Fujita, Michihiro Yamada, Yoshiaki Saito, Takashi Kimura, Hiroyoshi Itoh, Kohei Hamaya

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We show evident crystal orientation effect on pure spin current transport in Si-based lateral spin-valve (LSV) devices with epitaxially grown CoFe/MgO tunnel contacts. When we compare nonlocal spin signals between LSV devices along 1 0 0 (Si1 0 0) and 1 1 0 (Si1 1 0), we find that the magnitude of the spin signals for Si1 0 0 LSV devices is always larger than that for Si1 1 0 LSV devices. The analyses based on the one-dimensional spin diffusion model reveal that the spin diffusion length and spin lifetime between Si1 0 0 and Si1 1 0 LSV devices are comparable, while the spin injection/detection efficiency in Si1 0 0 LSV devices is evidently larger than that in Si1 1 0 ones. Possible origins of the difference in the spin injection/detection efficiency between Si1 0 0 and Si1 1 0 LSV devices are discussed.

Original languageEnglish
Article number085102
JournalJournal of Physics D: Applied Physics
Volume52
Issue number8
DOIs
Publication statusPublished - 2019 Feb 20

Keywords

  • semiconductor spintronics
  • spin injection
  • spin transport

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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