Crystal growth, transport properties, and crystal structure of the single-crystal (formula presented)

T. Adachi, T. Noji, Y. Koike

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have attempted the crystal growth by the traveling-solvent floating-zone (TSFZ) method of (formula presented) where the superconductivity is strongly suppressed. Under flowing (formula presented) gas at high pressure (4 bars), we have succeeded in growing single crystals for (formula presented) of 5 mm in diameter and 20 mm in length. Both in-plane and out-of-plane electrical resistivities of single-crystal (formula presented) exhibit a clear jump at (formula presented) The temperature corresponds to the structural phase transition temperature between the orthorhombic midtemperature and tetragonal low-temperature phases, (formula presented) Both in-plane thermoelectric power and Hall coefficient drop rapidly at (formula presented) and decrease below (formula presented) with decreasing temperature. These results are quite similar to those observed in single-crystal (formula presented) suggesting that the so-called static stripe order of holes and spins in the (formula presented) plane is formed below (formula presented) in (formula presented) as well as in (formula presented).

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number14
DOIs
Publication statusPublished - 2001 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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