We have attempted the crystal growth by the traveling-solvent floating-zone (TSFZ) method of La2-xBaxCuO4 (x∼1/8), where the superconductivity is strongly suppressed. Under flowing O2 gas at high pressure (4 bars), we have succeeded in growing single crystals for x=0.11 of 5 mm in diameter and 20 mm in length. Both in-plane and out-of-plane electrical resistivities of single-crystal La2-xBaxCuO4 (x=0.11) exhibit a clear jump at ∼53 K. The temperature corresponds to the structural phase transition temperature between the orthorhombic midtemperature and tetragonal low-temperature phases, Td2. Both in-plane thermoelectric power and Hall coefficient drop rapidly at Td2 and decrease below Td2 with decreasing temperature. These results are quite similar to those observed in single-crystal La1.6-xNd0.4SrxCuO4 (x∼1/8), suggesting that the so-called static stripe order of holes and spins in the CuO2 plane is formed below Td2 in La2-xBaxCuO4 (x∼1/8) as well as in La1.6-xNd0.4SrxCuO4 (x∼1/8).
|Number of pages||7|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2001 Oct 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics