Crystal growth, transport properties, and crystal structure of the single-crystal La2-xBaxCuO4 (x=0.11)

T. Adachi, Takashi Noji, Yoji Koike

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51 Citations (Scopus)


We have attempted the crystal growth by the traveling-solvent floating-zone (TSFZ) method of La2-xBaxCuO4 (x∼1/8), where the superconductivity is strongly suppressed. Under flowing O2 gas at high pressure (4 bars), we have succeeded in growing single crystals for x=0.11 of 5 mm in diameter and 20 mm in length. Both in-plane and out-of-plane electrical resistivities of single-crystal La2-xBaxCuO4 (x=0.11) exhibit a clear jump at ∼53 K. The temperature corresponds to the structural phase transition temperature between the orthorhombic midtemperature and tetragonal low-temperature phases, Td2. Both in-plane thermoelectric power and Hall coefficient drop rapidly at Td2 and decrease below Td2 with decreasing temperature. These results are quite similar to those observed in single-crystal La1.6-xNd0.4SrxCuO4 (x∼1/8), suggesting that the so-called static stripe order of holes and spins in the CuO2 plane is formed below Td2 in La2-xBaxCuO4 (x∼1/8) as well as in La1.6-xNd0.4SrxCuO4 (x∼1/8).

Original languageEnglish
Article number144524
Pages (from-to)1445241-1445247
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number14
Publication statusPublished - 2001 Oct 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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