Crystal growth, optical and luminescence properties of Pr-doped Y2SiO5 single crystals

A. Novoselov, H. Ogino, A. Yoshikawa, M. Nikl, Jan Pejchal, A. Beitlerova, T. Fukuda

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Using the micro-pulling-down method, Pr3+-doped Y2SiO5 single crystals have been grown and their optical and luminescence properties have been investigated. The position of the lowest 5d absorption level was found at about 246 nm and an intense and fast 5d-4f luminescence peaking round 275 nm with a shoulder round 315 nm has been observed at room temperature. Photoluminescence decay time at room temperature was obtained to be of about 17 ns in the leading decay component.

Original languageEnglish
Pages (from-to)1381-1384
Number of pages4
JournalOptical Materials
Volume29
Issue number11
DOIs
Publication statusPublished - 2007 Jul

Keywords

  • Micro-pulling-down method
  • Oxides
  • Pr-doping
  • Scintillator materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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